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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION With TO-220C package High breakdown voltage and high reliability Fast switching speed. Wide ASO (Safe Operating Area) APPLICATIONS 800V/3A switching regulator applications
PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION
2SC3457
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg
Collector-base voltage

PARAMETER
CHA IN
Collector current Base current Collector dissipation
Collector-emitter voltage
Emitter-base voltage
ES NG
Open emitter
Open base
MIC E
CONDITIONS
OND
TOR UC
VALUE 1100 800 7 3 10 1.5
UNIT V V V A A A W ae ae
Open collector
Collector current-peak
TC=25ae
50 150 -55~150
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IB=0 IC=1.5A; IB=0.3A IC=1.5A; IB=0.3A VCB=800V ;IE=0 VEB=5V; IC=0 IC=0.2A ; VCE=5V IC=1A ; VCE=5V IC=0.2A ; VCE=10V 10 8 MIN 800 1100 7 TYP.
2SC3457
SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB
MAX
UNIT V V V
2.0 1.5 10 10 40 |I |I
V V A A
Switching times ton tstg tf
IN
Fall time
Output capacitance

Turn-on time
Storage time
CHA
L 15-30
E SEM NG
f=1MHz ; VCB=10V
OND IC
TOR UC
15 60 0.5 3.0 0.3
MHz pF
|I |I |I
s s s
VCC=400V; IC=2A IB1=0.4A;IB2=-0.8A; RL=200|
hFE-1 classifications K 10-20 M 20-40
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3457

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions (unindicated tolerance:A
0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3457

CHA IN
E SEM NG
OND IC
TOR UC
4


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